cris.boxmetadata.label.title
Effect of native oxide mechanical deformation on InP nanoindentation
cris.boxmetadata.label.dateissued
01 browse.startsWith.months.december 2008
cris.boxmetadata.label.accesslevel
metadata only access
cris.boxmetadata.label.resourcetype
journal article
cris.boxmetadata.label.authors
cris.boxmetadata.label.abstract
Native oxide has been found to have a noticeable effect on the mechanical deformation of InP during nanoindentation. The indentations were performed using spherical diamond tips and the residual impressions were studied by atomic force microscopy. It has been observed that in the early stages of mechanical deformation, plastic flow occurs in the oxide layer while the indium phosphide is still in the elastic regime. The deformed native oxide layer results in a pile-up formation that causes an increase in the contact area between the tip and the surface during the nanoindentation process. This increase in the projected contact area is shown to contribute to the apparent high pressure sustained by the crystal before the onset of plastic deformation. It is also shown that the stress necessary to generate the first dislocations from the crystal surface is ∼3 GPa higher than the stress needed for slip to occur when dislocations are already present in the crystalline structure. © 2008 American Institute of Physics.
cris.boxmetadata.label.volume
104
cris.boxmetadata.label.issue
11
cris.boxmetadata.label.language
English
cris.boxmetadata.label.ocdeknowledgeArea
Física atómica, molecular y química
cris.boxmetadata.label.doi
cris.boxmetadata.label.scopusidentifier
2-s2.0-58149218064
cris.boxmetadata.label.source
Journal of Applied Physics
cris.boxmetadata.label.containerissn
00218979
cris.boxmetadata.label.sponsor
This work was partially supported by the Brazilian Agencies: Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) and Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ). The authors wish to thank L. Kuhn from Hysitron for fruitful discussions, M. E. H. Maia da Costa from Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro for the XPS measurements, and M. P. Pires from Universidade Federal do Rio de Janeiro and P. L. Souza from Laboratorio de Semicondutores, Centro de Estudos em Telecomunicações, Pontifícia Universidade Católica do Rio de Janeiro for the InP samples.
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