Title
Concentration quenching of tb3+ doped SiC:H and AlN thin films in photoluminescence and cathodoluminescence measurements
Date Issued
01 January 2013
Access level
metadata only access
Resource Type
conference paper
Author(s)
Benz F.
Montañez L.
Schaaf P.
Winnacker A.
Strunk H.
Institute of Materials Technology
Publisher(s)
Materials Research Society
Abstract
We present a systematic study of photo- and cathodoluminescence measurements in the visible of Terbium doped SiC:H and AlN thin films. The Terbium atomic concentrations vary from 0.9 to 10% for the SiC:H and from 0.8 to 6% for the AlN samples. For both materials the increase of the emission intensity with concentration and the subsequent quenching effect can be seen. The optimal concentration for the highest light emission is found. Photoluminescence excitation spectroscopy addresses the enhancement light emission mechanisms of the principal emission electronic transition of Terbium at ∼542 nm. © 2013 Materials Research Society.
Start page
1
End page
6
Volume
1571
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Scopus EID
2-s2.0-84900314996
Source
Materials Research Society Symposium Proceedings
Resource of which it is part
Materials Research Society Symposium Proceedings
ISSN of the container
02729172
ISBN of the container
978-163266152-4
Sources of information:
Directorio de Producción Científica
Scopus