Title
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers
Date Issued
21 June 2016
Access level
metadata only access
Resource Type
journal article
Author(s)
Tavares B.G.M.
Pusep Y.A.
University of São Paulo
Publisher(s)
American Institute of Physics Inc.
Abstract
The processes of recombination of the photoexcited electron-hole pairs were studied in GaAs/AlGaAs weakly coupled multiple quantum wells, where the photoluminescence emission was composed of the contributions from the Γ-Γ and Γ-X conduction band minibands. Remarkable enhancement of the recombination time was observed when the magnetic field caused depopulation of the higher energy Γ-X miniband. The observed effect is attributed to the magnetic field induced variation of the electron density of states.
Volume
119
Issue
23
Language
English
OCDE Knowledge area
Física de la materia condensada Nano-materiales
Scopus EID
2-s2.0-84975263166
Source
Journal of Applied Physics
ISSN of the container
00218979
Sponsor(s)
Financial supports from the Brazilian agencies FAPESP and CNPq are gratefully acknowledged.
Sources of information: Directorio de Producción Científica Scopus