Title
Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition
Date Issued
15 January 2011
Access level
metadata only access
Resource Type
journal article
Author(s)
Liu J.
Zhang Y.
Lochner Z.
Kim S.S.
Kim H.
Ryou J.H.
Shen S.C.
Doug Yoder P.
Dupuis R.D.
Wei Q.Y.
Sun K.W.
Fischer A.M.
Abstract
We report the effects of epitaxial layer design on III-N visible laser diode (LD) performance. In order to mitigate electron accumulation at the interface between the top GaN quantum barrier and the AlGaN electron blocking layer (EBL) induced by polarization fields, a tapered AlGaN EBL was used. Compared to LDs with conventional AlGaN EBLs, the threshold current density of LDs with a tapered AlGaN EBL is significantly reduced and the slope efficiency is increased. In0.03Ga0.97N was used as waveguide layers in blue LD structures to increase the optical confinement. It is observed that In0.03Ga0.97N waveguiding layers significantly improve the emission efficiency of the active region in addition to offering better optical confinement. The responsible underlying mechanism has been investigated. © 2010 Elsevier B.V.
Start page
272
End page
277
Volume
315
Issue
1
Language
English
OCDE Knowledge area
Química física
Subjects
Scopus EID
2-s2.0-79551686206
Source
Journal of Crystal Growth
ISSN of the container
00220248
Sponsor(s)
The research was supported by the DARPA VIGIL program (Contract # FA8718-08-C-0006 ). R.D. Dupuis acknowledges the support of Steve W. Chaddick Endowed Chair in Electro-Optics, and the Georgia Research Alliance.
Sources of information:
Directorio de Producción Científica
Scopus