Title
Hydrogen-related, deeply bound excitons in Mg-doped GaN films
Date Issued
19 August 2013
Access level
metadata only access
Resource Type
journal article
Author(s)
Juday R.
Fischer A.
Huang Y.
Huang J.
Kim H.
Ryou J.
Dupuis R.
Bour D.
Abstract
Luminescence in the near band-edge spectral region of Mg-doped GaN films grown by metalorganic chemical vapor deposition has been studied at liquid-helium temperatures. Radiative transitions at 3.37 and 3.416 eV were observed to evolve in cathodoluminescence spectra during electron-beam irradiation at 5 kV. The intensity of the 3.37 eV peak correlates monotonically with the resistivity of the films. By annealing the films in N2 and N2/H2 atmospheres, the 3.37 and 3.416 eV transitions are shown to be related to hydrogen. © 2013 AIP Publishing LLC.
Volume
103
Issue
8
Language
English
OCDE Knowledge area
Química física
Scopus EID
2-s2.0-84883363330
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
The research at ASU was supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895, and in part by the NSF Materials World Network (DMR-1108450). An ARCS Foundation award to Reid Juday, sponsored by Ms. Joan Jugloff, is gratefully recognized. We gratefully acknowledge help in the annealing experiments from David Wright, and the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University. The research at Georgia Tech was supported in part by the Steve W. Chaddick Chair in Electro-Optics.
Sources of information:
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