The physical phenomena underlying crack initiation and hence failures in interconnection alloy is investigated using the ABV model [1] (Metals A and B and void V) focusing on boundary effects at the interface with the device. The Hamiltonian which is expressed as the sum of the interaction energies between A, B and V with interaction parameters EAA, EBB, EAB, EAV and EBV and reformulated in terms of fictitious 3 states spins (-1, 0, +1). And new parameters J, K, and U function of the interaction energy parameters between the metal atoms A, B and void V are defined and associated to the different spin combinations of the transformed Hamiltonian. A Monte Carlo (MC) simulation of a 2D microscopic 3 states Ising model taking into account edge effects [2] at the boundary between an active chip in a photovoltaic device or a sensor and nanoparticles of an interconnect alloy is performed. The results are discussed in terms of realistic values of interaction parameters and different algorithms for fixed compositions of A, B and V.