Title
Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
Date Issued
01 January 2003
Access level
metadata only access
Resource Type
conference paper
Author(s)
University of Erlangen-Nürnberg
Publisher(s)
Trans Tech Publications Ltd
Abstract
We present an optical method for the determination of the charge carrier concentration as well as the compensation level based on absorption measurements at room temperature in n-type 6H-SiC. Below band-gap absorption bands (BBGA) are best fitted by a Fano like shape. Calibration plots are provided for evaluation of the charge carrier concentration from the peak area of the BBGA. The compensation level is derived from the comparison of the peak area of the BBGA and the absolute peak value.
Start page
333
End page
336
Volume
433-436
Language
English
OCDE Knowledge area
Ingeniería de materiales
Subjects
Scopus EID
2-s2.0-0038725160
Source
Materials Science Forum
ISSN of the container
02555476
ISBN of the container
978-087849920-5
Conference
Proceedings of the 4th European Conference on Silicon Carbide and Related Materials
Sources of information:
Directorio de Producción Científica
Scopus