Title
Studies of Radiation-Induced Defects in Li2SiO3:Sm Phosphor Material
Date Issued
01 January 2017
Access level
metadata only access
Resource Type
journal article
Author(s)
Singh N.
Singh V.
Watanabe S.
Gundu Rao T.
Chubaci J.
Pathak M.
Singh P.
Dhoble S.
Universidad Federal de Sao Paulo
Publisher(s)
Springer New York LLC
Abstract
Li2SiO3:Sm was synthesized by the solution combustion method. Powder x-ray diffraction technique was used to find the phase formation. Li2SiO3:Sm exhibits thermoluminescence (TL) peaks at approximately 140°C, 155°C, 190°C, 250°C, and 405°C. Three defect centers contribute to the observed electron spin resonance spectrum from the gamma irradiated phosphor. Center I with principal g-values g|| = 2.0206 and g⊥ = 2.0028 is identified as an O2− ion while center II, with an isotropic g-factor 2.0039, is assigned to an F+-type center. Center III is assigned to a Ti3+ center. The Ti3+ center is related to the 250°C TL peak while the O2− ion also correlates with the main TL peak at 250°C. An additional defect center is observed during thermal annealing experiments, and the center (assigned to F+ center) seems to originate from an F center. The F center appears to be associated with the high temperature TL peak in a Li2SiO3:Sm phosphor. The luminescence spectrum reveals the dominant emission peaks at 605 (4G5/2 → 6H7/2) nm under the excitation wavelength of 402 nm.
Start page
451
End page
457
Volume
46
Issue
1
Language
English
OCDE Knowledge area
Electroquímica Química orgánica
Scopus EID
2-s2.0-84984870593
Source
Journal of Electronic Materials
ISSN of the container
03615235
Sources of information: Directorio de Producción Científica Scopus