Title
In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs
Date Issued
01 January 2010
Access level
open access
Resource Type
conference output
Author(s)
Ostapenko I.
Stock E.
Warming T.
Rodt S.
Schliwa A.
Öztürk M.
Lochmann A.
Bimberg D.
Toropov A.
Moshchenko S.
Dmitriev D.
Haisler V.
Publisher(s)
Institute of Physics Publishing
Abstract
Here we present the first successful growth and spectroscopic investigation of In(Ga)As/GaAs (111) quantum dots (QD). These QD were recently predicted as promising emitters of entangled photon pairs due to their intrinsic threefold degenerate symmetry resulting in zero fine structure splitting (FSS). Low spatial densities of the QDs were grown by droplet epitaxy in an MBE system. Emission of truly single photons is proved by correlation measurements. Using spatially-resolved power- and polarization- dependent experiments we discovered the characteristic excitonic luminescence fingerprints from a number of QDs. Excitonic FSS below 10 μeV, our resolution limit, is observed in agreement with our predictions. © 2010 IOP Publishing Ltd.
Volume
244
Language
English
OCDE Knowledge area
Física y Astronomía
Scopus EID
2-s2.0-78651231886
Source
Journal of Physics: Conference Series
ISSN of the container
17426588
Sources of information: Directorio de Producción Científica Scopus