Title
Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study
Date Issued
30 June 2005
Access level
metadata only access
Resource Type
conference paper
Author(s)
Bell A.
Christen J.
Bertram F.
Stevens M.
Marui H.
Tanaka S.
Abstract
Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions. © 2005 American Institute of Physics.
Start page
301
End page
302
Volume
772
Language
English
OCDE Knowledge area
Química física
Scopus EID
2-s2.0-33749518230
ISBN
0735402574
9780735402577
ISSN of the container
0094243X
ISBN of the container
0735402574
Conference
AIP Conference Proceedings
Sources of information:
Directorio de Producción Científica
Scopus