Title
Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology
Date Issued
18 November 2016
Access level
metadata only access
Resource Type
conference paper
Author(s)
Williams J.
McFavilen H.
Fischer A.
Ding D.
Young S.
Vadiee E.
Arena C.
Honsberg C.
Goodnick S.
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
Start page
193
End page
195
Volume
2016-November
Language
English
OCDE Knowledge area
Química física
Scopus EID
2-s2.0-85003678422
ISSN of the container
01608371
ISBN of the container
978-150902724-8
Conference
Conference Record of the IEEE Photovoltaic Specialists Conference
Sources of information:
Directorio de Producción Científica
Scopus