Title
Non-linear modeling for low and high power microwave transistors.
Date Issued
01 January 2016
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
An improved way to implement nonlinear models for microwave transistors is shown for GaAs, GaN and LDMOS devices. It allows conventional drain current functions and conventional equivalent circuits to enhance their capabilities in order to predict frequency dispersion.
Start page
847
End page
850
Language
English
OCDE Knowledge area
Otras ingenierías y tecnologías
Subjects
Scopus EID
2-s2.0-85015196225
Resource of which it is part
European Microwave Week 2016: "Microwaves Everywhere", EuMW 2016 - Conference Proceedings; 46th European Microwave Conference, EuMC 2016
ISBN of the container
978-287487043-9
Conference
46th European Microwave Conference, EuMC 2016, London, 4 October 2016 through 6 October 2016
Sources of information:
Directorio de Producción Científica
Scopus