In recent years, SiC power modules have attracted a lot of attention because they offer higher frequency and density as compared to the conventional Si power module. However high speed switching inevitably lead to the generation of surge voltage which may damage the power module. The design of layout, which composed of copper patterns, power semiconductors and terminals, is one of the factors that is necessary to overcome the problem. In this paper, the layout design of the half-bridge power module is optimized to reduce its internal inductance. The inductance was evaluated by electromagnetic field simulation.