Title
Effect of post-annealing treatment on the structure and luminescence properties of AIN: Tb 3+ thin films prepared by radio frequency magnetron sputtering
Date Issued
2017
Access level
restricted access
Resource Type
conference paper
Author(s)
Flores Escalante L.F.
Kups T.
Pezoldt J.
Osvet A.
Batentschuk M.
Publisher(s)
Trans Tech Publications Ltd
Abstract
Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission. © 2017 Trans Tech Publications, Switzerland.
Start page
299
End page
302
Volume
890 MSF
Number
3
Language
English
Subjects
Scopus EID
2-s2.0-85016419055
Source
Materials Science Forum
ISSN of the container
0255-5476
ISBN of the container
9783035710281
Conference
5th International Conference on Material Science and Engineering Technology, ICMSET 2016
Source funding
Sponsor(s)
This work was funded by the Peruvian science foundation FONDECYT under the projects “Círculos de investigación en ciencia y tecnología-2”, contract number 011-2014 and under the cooperation project with the German academic exchange service (DAAD), contract number 035-2016. The authors also gratefully acknowledge the support of Karem Tucto and Loreleyn Flores by CONCYTEC under the contract numbers 012-2013-FONDECYT and 000236-2015-FONDECYTDE, respectivley.
Sources of information:
Directorio de Producción Científica