Title
Nanopipes and inversion domains in high-quality GaN epitaxial layers
Date Issued
01 January 1997
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Materials Research Society
Abstract
In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the (0001) direction and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors inversion domains with [0001] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.
Start page
405
End page
410
Volume
449
Language
English
OCDE Knowledge area
Química física
Scopus EID
2-s2.0-0030679048
ISSN of the container
02729172
Conference
Materials Research Society Symposium - Proceedings
Sources of information:
Directorio de Producción Científica
Scopus