Title
Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition
Date Issued
12 June 2013
Access level
metadata only access
Resource Type
conference paper
Author(s)
Lochner Z.
Kao T.T.
Liu Y.S.
Li X.H.
Satter M.M.
Shen S.C.
Yoder P.D.
Ryou J.H.
Dupuis R.D.
Wei Y.
Xie H.
Fischer A.
Abstract
Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm. © 2013 SPIE.
Volume
8625
Language
English
OCDE Knowledge area
Electroquímica
Subjects
Scopus EID
2-s2.0-84878734203
ISSN of the container
0277786X
Conference
Proceedings of SPIE - The International Society for Optical Engineering
Sources of information:
Directorio de Producción Científica
Scopus