Title
Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA
Date Issued
01 August 2017
Access level
open access
Resource Type
journal article
Author(s)
Kastensmidt F.L.
Artola L.
Hubert G.
Medina N.H.
Added N.
Aguiar V.A.P.
Aguirre F.
Macchione E.L.A.
Silveira M.A.G.
Institute of the Austrian Academy of Sciences
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
This paper shows the impact of low linear energy transfer heavy ions on the reliability of 28-nm Bulk static random access memory (RAM) cells from Artix-7 field-programmable gate array. Irradiation tests on the ground showed significant differences in the multiple bit upset cross section of configuration RAM and block RAM memory cells under various angles of incidence and rotation of the device. Experimental data are analyzed at transistor level by using the single-event effect prediction tool called multiscale single-event phenomenon prediction platform coupled with SPICE simulations.
Start page
2161
End page
2168
Volume
64
Issue
8
Language
English
OCDE Knowledge area
Ingeniería de sistemas y comunicaciones
Subjects
Scopus EID
2-s2.0-85028856429
Source
IEEE Transactions on Nuclear Science
ISSN of the container
0018-9499
Sponsor(s)
Manuscript received May 4, 2017; revised June 22, 2017; accepted July 11, 2017. Date of publication July 17, 2017; date of current version August 15, 2017. This work was supported in part by CNPq, Brazilian Research Agency, in part by CAPES, Brazilian Research Agency, in part by FAPERGS, Brazilian Research Agency, and in part by FAPESP Brazilian Research Agency.
Sources of information:
Directorio de Producción Científica
Scopus