Title
Mg incorporation in AlGaN layers grown on grooved sapphire substrates
Date Issued
01 December 2002
Access level
metadata only access
Resource Type
conference paper
Author(s)
Abstract
Transmission electron microscopy has been used to examine the spatial distribution of Mg-related precipitates in an Al0.03Ga0.97N layer grown by metal-organic chemical vapour deposition on a grooved sapphire substrate. It is shown that Mg precipitation takes place in vertical, but not in lateral, growth sectors. Evidence is presented for Mg segregation to edge and mixed dislocations leading to these dislocations having hollow cores with diameters of 1-2 nm. It is concluded that during growth Mg segregates to sinks on the (0001) surface, but not on inclined growth facets.
Start page
850
End page
854
Volume
234
Issue
3
Language
English
OCDE Knowledge area
Física de partículas, Campos de la Física
Scopus EID
2-s2.0-0036924915
Source
Physica Status Solidi (B) Basic Research
ISSN of the container
03701972
Sources of information:
Directorio de Producción Científica
Scopus