Title
ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES.
Date Issued
01 December 1987
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Materials Research Soc
Abstract
Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.
Start page
199
End page
208
Volume
90
Language
English
OCDE Knowledge area
Química física
Scopus EID
2-s2.0-0023561428
ISBN
0931837553
ISSN of the container
02729172
ISBN of the container
0931837553
Conference
Materials Research Society Symposia Proceedings
Sources of information:
Directorio de Producción Científica
Scopus