<p>The films composed of (1-x) BiFeO₃- (x) CoFe₂O₄ varying the concentration (x = 0, 0.1, 0.2 and 0.3) were deposited by spin coating on Pt substrate (Pt / TiO₂ / SiO₂ / Si) from of 0.05 molar concentration precursors solutions, which were obtained by sol-gel method. Thin films characterization was made, the structure and the magnetoelectric properties were studied using X-ray diffraction, leakage current, dielectric constant, fer-roelectric and ferromagnetic hysteresis curve. The XRD results show characteristic peaks with the formation of BiFeO3 and the growth of peaks belonging to CoFe₂O₄ with the increase of x. All samples reveal little leakage current, being the lowest of 10^-10 A/cm² for (0.8) BiFeO₃- (0.2) CoFe₂O₄. The dielectric constant in-creased in the range from 10² Hz to 10⁵ Hz then decreased due to dielectric relaxation, for all samples the dielectric loss is less than 4%. All fabricated films show remnants polarization and magnetization greater than 60 µC/cm² and 30 emu/gr respectively.</p>