Title
Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si
Date Issued
01 January 1993
Access level
metadata only access
Resource Type
journal article
Author(s)
Molina S.
Aragón G.
González Y.
González L.
Briones F.
García R.
Abstract
A high-resolution electron microscopy (HREM) study on antiphase boundaries in GaAs grown on Si is presented. HREM images of two close antiphase boundaries appearing mainly on the {110} planes which abruptly disappear suggest some ideas on the mechanisms of annihilation of these defects. © 1993.
Start page
353
End page
355
Volume
15
Issue
June 5
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Scopus EID
2-s2.0-0027146741
Source
Materials Letters
ISSN of the container
0167577X
Sources of information:
Directorio de Producción Científica
Scopus