Title
Microstructural properties of Eu-doped GaN luminescent powders
Date Issued
09 September 2002
Access level
metadata only access
Resource Type
journal article
Author(s)
Contreras O.
Srinivasan S.
Hirata G.A.
Ramos F.
McKittrick J.
Publisher(s)
American Institute of Physics Inc.
Abstract
GaN powders doped with europium have been prepared using Eu and Ga nitrates and N2H4 as reactants. The resulting particles have dimensions ranging from 0.5 to 1.0 μm. The crystalline structure was studied by transmission electron microscopy, and it consisted of single crystals with a hexagonal (wurtzite) structure containing small cubic domains (zinc blende) and a high density of stacking faults, all aligned along the [0001] and 〈111〉 directions, respectively. Cathodoluminescence measurements show strong light emission in the red region. This luminescence corresponds to transitions of Eu with the strongest emission in the 611 nm line, which is associated to the Eu3+ 4f transition from 5D0 to 7F2. These results demonstrate the feasibility of GaN:RE powders for luminescent applications. © 2002 American Institute of Physics.
Start page
1993
End page
1995
Volume
81
Issue
11
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Scopus EID
2-s2.0-79956032880
Source
Applied Physics Letters
ISSN of the container
00036951
Sources of information: Directorio de Producción Científica Scopus