Title
Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device
Date Issued
26 February 2018
Access level
open access
Resource Type
journal article
Author(s)
Kayyalha M.
Kazakov A.
Miotkowski I.
Rokhinson L.P.
Chen Y.P.
Harvard University
Publisher(s)
American Institute of Physics Inc.
Abstract
We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MARs) in a bulk-insulating BiSbTeSe2 topological insulator nanoribbon (TINR) Josephson junction with superconducting Nb contacts. We observe a gate-tunable critical current (IC) for gate voltages (Vg) above the charge neutrality point (VCNP), with IC as large as 430 nA. We also observe MAR peaks in the differential conductance (dI/dV) versus DC voltage (Vdc) across the junction corresponding to sub-harmonic peaks (at Vdc = Vn = 2ΔNb/en, where ΔNb is the superconducting gap of the Nb contacts and n is the sub-harmonic order). The sub-harmonic order, n, exhibits a Vg-dependence and reaches n = 13 for Vg = 40 V, indicating the high transparency of the Nb contacts to TINR. Our observations pave the way toward exploring the possibilities of using TINR in topologically protected devices that may host exotic physics such as Majorana fermions.
Volume
112
Issue
9
Language
English
OCDE Knowledge area
Física y Astronomía
Scopus EID
2-s2.0-85042692034
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
Funding text We acknowledge support from NSF (DMR No. 1410942). The TI material synthesis was supported by the DARPA MESO Program (Grant No. N66001-11-1-4107). L.A.J. also acknowledges support from a Purdue Center for Topological Materials fellowship. L.P.R. and A.K. acknowledge support from the U.S. Department of Energy under Award No. DE-SC0008630.
Sources of information: Directorio de Producción Científica Scopus