Title
Band alignment at amorphous/crystalline silicon hetero-interfaces
Date Issued
01 January 2012
Access level
metadata only access
Resource Type
conference paper
Author(s)
Helmholtz-Zentrum Berlin Fudie;r Materialien und Energie
Abstract
We present an investigation of the band offsets in amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si) using low energy photoelectron spectroscopy, ellipsometry and surface photovoltage data. For a variation of deposition conditions that lead to changes in hydrogen content and the thereby the a-Si:H band gap by ∼180 meV, we find that mainly the conduction band offset ΔE V varies, while ΔE C stays constant within experimental error. This result can be understood in the framework of charge neutrality (CNL) band lineup theory. © 2011 Materials Research Society.
Start page
323
End page
328
Volume
1321
Language
English
OCDE Knowledge area
Ingeniería del Petróleo, (combustibles, aceites), Energía, Combustibles
Scopus EID
2-s2.0-84455190943
ISSN of the container
02729172
ISBN of the container
9781605112985
Conference
Materials Research Society Symposium Proceedings: 2011 MRS Spring Meeting
Sources of information:
Directorio de Producción Científica
Scopus