Title
Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates
Date Issued
31 August 2006
Access level
metadata only access
Resource Type
journal article
Author(s)
Chen Z.
Qhalid Fareed R.S.
Gaevski M.
Adivarahan V.
Yang J.W.
Khan A.
Mei J.
Abstract
The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150 °C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4-10 μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films. © 2006 American Institute of Physics.
Volume
89
Issue
8
Language
English
OCDE Knowledge area
Física de partículas, Campos de la Física
Scopus EID
2-s2.0-33747825033
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
The authors would like to thank M. Shatalov at USC for the PL characterization data. The use of the facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University is gratefully acknowledged. The authors also thank S. Srinivasan and M. Stevens at ASU for their assistance and helpful discussions. The work at USC was partially supported by DARPA under Grant No. DAAD19-02-1-0282, monitored by H. Temkin (DARPA) and J. Zavada (ARO).
Sources of information:
Directorio de Producción Científica
Scopus