Title
Thermal activation and cathodoluminescence measurements of Tb 3+-doped a-(SiC)1-x(AlN)x thin films
Date Issued
01 January 2010
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Trans Tech Publications Ltd
Abstract
We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity. © (2010) Trans Tech Publications.
Start page
459
End page
462
Volume
645-648
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Subjects
Scopus EID
2-s2.0-77955452284
Source
Materials Science Forum
Resource of which it is part
Materials Science Forum
ISSN of the container
02555476
ISBN of the container
0878492798, 978-087849279-4
Conference
13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Sources of information:
Directorio de Producción Científica
Scopus