Title
Atomic arrangement at the AIN/Si (111) interface
Date Issued
04 August 2003
Access level
metadata only access
Resource Type
journal article
Author(s)
Liu R.
PONCE ANTUNEZ DE MAYOLO, FERNANDO AGUSTIN
Dadgar A.
Krost A.
Abstract
A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.
Start page
860
End page
862
Volume
83
Issue
5
Language
English
OCDE Knowledge area
Física atómica, molecular y química
DOI
10.1063/1.1597749
Scopus EID
2-s2.0-0042378607
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
Crystal lattices; Crystallography; Dislocations (crystals); Gallium nitride; High resolution electron microscopy; Interfaces (materials); Nucleation; Semiconducting silicon; Thermodynamic stability; Vapor phase epitaxy.
Sources of information: Directorio de Producción Científica Scopus