Title
Polycrystalline silicon thin-film solar cells: Status and perspectives
Date Issued
17 June 2013
Access level
metadata only access
Resource Type
journal article
Author(s)
Becker C.
Amkreutz D.
Sontheimer T.
Preidel V.
Lockau D.
Haschke J.
Jogschies L.
Klimm C.
Merkel J.
Plocica P.
Steffens S.
Institut Silizium Photovoltaik
Publisher(s)
Elsevier
Abstract
The present article gives a summary of recent technological and scientific developments in the field of polycrystalline silicon (poly-Si) thin-film solar cells on foreign substrates. Cost-effective fabrication methods and cheap substrate materials make poly-Si thin-film solar cells promising candidates for photovoltaics. However, it is still the challenge for research and development to achieve the necessary high electrical material quality known from crystalline Si wafers on glass as a prerequisite to harvest the advantages of thin-film technologies. A wide variety of poly-Si thin-film solar cell approaches has been investigated in the past years, such as thermal solid phase crystallization - the only technology that had already been matured to industrial production so far - the seed layer concept where a large-grained seed layer is epitaxially thickened, direct growth of fine grained material, and liquid phase crystallization methods by laser or electron beam. In the first part of this paper, the status of these four different poly-Si thin-film solar cell concepts is summarized, by comparing the technological fabrication methods, as well as the structural and electrical properties and solar cell performances of the respective materials. In the second part, three promising technologies are described in more detail due to their highly auspicious properties regarding material quality and throughput aspects during fabrication: (1) High-rate electron-beam evaporation of silicon for the low-cost deposition of high-quality material, (2) large-area periodic nano- and micro-structuring of poly-Si by the use of imprinted substrates providing a large absorption enhancement by a factor of six at a wavelength of 900 nm, (3) liquid-phase crystallization of silicon thin-film solar cells by electron-beam, yielding an excellent poly-Si material quality reflected by an open-circuit voltage of 582 mV which has been achieved only very recently. A successful combination of these three complementary technologies is envisaged to be the basis for a prospective low-cost and highly efficient poly-Si solar cell device. © 2013 Elsevier B.V.
Start page
112
End page
123
Volume
119
Language
English
OCDE Knowledge area
Recubrimiento, Películas Nano-materiales
Scopus EID
2-s2.0-84884902933
Source
Solar Energy Materials and Solar Cells
ISSN of the container
09270248
Sponsor(s)
The comparison of different poly-Si material types was subject of one workpackage in the FP7-project PolySiMode (Contract no. 240826) funded by the European Commission which is greatfully acknowledged. The authors thank all project partners from IMEC, Belgium (D. Van Gestel, I. Gordon), Fraunhofer ISE, Germany (S. Janz, S. Lindekugel, T. Rachow), InESS, France (A.Slaoui, A.Chowdhury), FZU Prague, Czech Republic (A. Fejfahr, M. Ledinsky, A. Vetushka), Suntech R&D Australia (J. Dore), former CSG Solar, Germany (J.-H. Zollondz, J. Schneider), Evonik Industries AG, Germany (P. Wöbkenberg) for fruitful and vivid discussions about poly-Si. We thank the SCHOTT AG, Mainz, Germany, for funding VP's PhD and for the supply of nanoimprint-lithographically textured glass substrates. The Federal Ministry of Education and Research (BMBF) is acknowledged for funding the research activities of the ‘Si-Nanoarchitectures’-group in the program NanoMatFutur (no. 03X5520). Furthermore, we thank S. Common, K. Jacob, and M. Reiche from HZB for technological support during solar cell fabrication.
Sources of information: Directorio de Producción Científica Scopus