Title
Crystalline silicon on glass—interface passivation and absorber material quality
Date Issued
01 December 2016
Access level
metadata only access
Resource Type
conference paper
Author(s)
Gabriel O.
Frijnts T.
Preissler N.
Amkreutz D.
Calnan S.
Ring S.
Stannowski B.
Schlatmann R.
Institute for Silicon Photovoltaics
Publisher(s)
John Wiley and Sons Ltd
Abstract
Thin crystalline silicon solar cells prepared directly on glass substrates by means of liquid-phase crystallization of the absorber utilize only a small fraction of the silicon material used by standard wafer-based silicon solar cells. The material consists of large crystal grains of up to square centimeter area and results in solar cells with open-circuit voltages of 650 mV, which is comparable with results achieved with multi-crystalline silicon wafers. We give a brief status update and present new results on the electronic interface and bulk properties. The interrelation between surface passivation and additional hydrogen plasma passivation is investigated for p-type and n-type absorbers with different doping concentrations. Internal quantum efficiency measurements from both sides on bifacial solar cells are used to extract the bulk-diffusion length and surface-recombination velocity. Finally, we compare various types of solar cell devices based on 10 µm thin crystalline silicon, where conversion efficiencies of 11–12% were achieved with p–type and n-type liquid-phase crystallized absorbers on glass. Copyright © 2015 John Wiley & Sons, Ltd.
Start page
1499
End page
1512
Volume
24
Issue
12
Language
English
OCDE Knowledge area
Física y Astronomía
Scopus EID
2-s2.0-84949009248
PubMed ID
Source
Progress in Photovoltaics: Research and Applications
ISSN of the container
10627995
Sources of information: Directorio de Producción Científica Scopus