Title
Gas-sensing properties of Sn<inf>x</inf>WO<inf>3+x</inf> mixed oxide thick films
Date Issued
30 May 1998
Access level
metadata only access
Resource Type
journal article
Publisher(s)
Elsevier
Abstract
Screen printing has been used to fabricate SnxWO3+x mixed oxide thick films on alumina substrates. The powders for the thick-film pastes were made by heating various mixtures of SnO and WO3 powders, corresponding to the nominal formula SnxWO3+x with x between 0.5 and 1.72, in an argon atmosphere at 600°C for 15 h. The α-SnWO4 phase was the result of heating of an equimolar mixture of SnO and WO3 powders. Tin appears in the valence state Sn2+ in α-SnWO4, but in the SnxWO3+x mixed oxides the Mössbauer spectroscopy revealed both Sn2+ and Sn4+ valence states of tin. In addition to the Mössbauer experiments, X-ray diffraction (and Raman spectroscopy) were used to study the structure of the mixed oxides used in the thick films. The electrical conductivity together with the gas-response properties of the films were studied at different temperatures between room temperature and 500°C. H2S, H2, CO, SO2, NO and NO2 at various concentrations in synthetic air were used as test gases in the measurements. Some thick films were very sensitive and selective to H2S and had an anomalous response to NO. © 1998 Elsevier Science S.A. All rights reserved.
Start page
322
End page
327
Volume
48
Issue
March 1
Language
English
OCDE Knowledge area
Física de partículas, Campos de la Física Electroquímica
Scopus EID
2-s2.0-0032068853
Source
Sensors and Actuators, B: Chemical
ISSN of the container
09254005
Sponsor(s)
J. Solis expresses his gratitude to International Science Programs of the Uppsala University, Sweden for financial support. The study was also financed by the Academy of Finland.
Sources of information: Directorio de Producción Científica Scopus