Title
Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn<sup>+</sup> ions
Date Issued
25 October 2004
Access level
open access
Resource Type
journal article
Author(s)
Chitta V.
Fernandez J.
Duarte C.
Leite J.
Schikora D.
As D.
Lischka K.
Abramof E.
Universidade de São Paulo
Publisher(s)
American Institute of Physics
Abstract
Mn ions were implanted in p-type cubic GaN at doses from 0.6 to 2.4 × 1016 cm-2 at 200 keV energy. A 200-nm-thick epitaxial layer, grown by molecular beam epitaxy on GaAs(001) substrate, is used for the Mn implantation. The Mn implanted samples were subjected to an annealing at 950°C for 1-5 min. The structural quality of the samples was investigated by high resolution x-ray diffraction and Raman spectroscopy. The annealing procedure leads to a significant increasing of the crystalline quality of the samples. Hysteresis loops were observed for all cubic GaMnN annealed samples and ferromagnetism was detected up to room temperature. © 2004 American Institute of Physics.
Start page
3777
End page
3779
Volume
85
Issue
17
Language
English
OCDE Knowledge area
Química física
Física atómica, molecular y química
Ingeniería química
Scopus EID
2-s2.0-9744223577
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
This work was supported by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), Conselho Nacional de Deselvolvimento Científico e Tecnológico (CNPq) and Deutsche Forschungsgemeinschaft (DFG). The authors are thankful to Professor I. Baumvol and Professor F. Zawislak for the ion implantations carried out at the Physics Institut, UFRGS.
Sources of information:
Directorio de Producción Científica
Scopus