Title
Texture etched aluminum doped zinc oxide-structural and electrical properties
Date Issued
01 January 1999
Access level
metadata only access
Resource Type
journal article
Author(s)
Löffl A.
Kerber H.
Schock H.
Kluth O.
Houben L.
Wagner H.
Forschungszentrum Jülich GmbH
Publisher(s)
Scitec Publications Ltd.
Abstract
This paper addresses the material properties of aluminum doped zinc oxide films prepared on glass by radio frequency and direct current reactive magnetron sputtering. Using adapted deposition parameters for both techniques, the initially smooth films exhibit high transparency and a resistivity of about 3×10-4 Ωcm. After deposition, these films were etched in diluted hydrochloric acid. Depending on the deposition parameters and the etching time, a surface texture with light scattering properties develops during the etching process. For each sputtering technique a separate optimization of the deposition parameters is necessary in order to obtain texturable ZnO:Al films.
Start page
277
End page
282
Volume
67
Language
English
OCDE Knowledge area
Ingeniería de materiales
Scopus EID
2-s2.0-18144445398
Source
Diffusion and Defect Data Pt.B: Solid State Phenomena
ISSN of the container
10120394
Sources of information: Directorio de Producción Científica Scopus