Title
Nonlinear current source model for a GaAs transistor implemented in Verilog-A using pulsed measurements
Date Issued
01 January 2020
Access level
metadata only access
Resource Type
conference paper
Author(s)
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
A Verilog-A model for a GaAs MESFET was implemented and validated. A modified nonlinear equation for Ids shows good results in the modelling of DC and pulsed I-V measurements. Transient simulations were performed, showing some of the dispersive effects in RF transistors due to the presence of traps.
Language
English
OCDE Knowledge area
Ingeniería eléctrica, Ingeniería electrónica
Subjects
Scopus EID
2-s2.0-85123402548
Resource of which it is part
2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020
ISBN of the container
9781728193588
Conference
2020 IEEE MTT-S Latin America Microwave Conference, LAMC 2020
Sources of information:
Directorio de Producción Científica
Scopus