Title
Fabrication of an electro-optical temperature sensor based on silicon oxynitride films deposited by PECVD
Date Issued
01 January 2007
Access level
metadata only access
Resource Type
conference paper
Author(s)
Martins G.S.P.
Mina A.M.
Universidad de São Paulo
Publisher(s)
Electrochemical Society Inc.
Abstract
In this work we present the fabrication and characterization of an electro-optical temperature sensor based on silicon oxynitride dielectric films deposited by Plasma Enhanced Chemical Vapor Deposition at low temperatures (∼300°C). The temperature sensor is basically a MachZehnder interferometer such that a temperature difference between its arms produces a phase difference between the electromagnetic waves traveling through each arm thus originating a variation in the output optical power. In order to analyze the feasibility of this sensor, a temperature difference is imposed by applying a heating element in one of the arms. The results show that it is possible to control the optical device output through the adequate control of the heating element. Furthermore, the influence of heat propagation, multimode noise and methods to obtain monomode optical waveguides and self-sustained Mach-Zehnder structures are discussed in this work. © 2006 The Electrochemical Society.
Start page
161
End page
169
Volume
4
Issue
1
Language
English
OCDE Knowledge area
Recubrimiento, Películas Óptica
Scopus EID
2-s2.0-33847612098
ISBN
9781566775120
ISSN of the container
19385862
ISBN of the container
978-156677512-0
Conference
ECS Transactions - 21st International Symposium on Microelectronics Technology and Devices, SBMicro 200628 August 2006through 1 September 2006Code 69299
Sources of information: Directorio de Producción Científica Scopus