Title
Incandescent microlamps based on MEMS and PECVD materials
Date Issued
21 May 2008
Access level
metadata only access
Resource Type
conference paper
Author(s)
Rehder G.
Carreño M.N.P.
Universidad de São Paulo
Abstract
In this work we present the fabrication and operation of incandescent microlamps that emit white and infrared light from a chromium resistor embedded in a free-standing silicon oxynitride (SiOxNy) cantilever. In fact, the chromium resistor is sandwiched between layers of SiO xNy that isolates it from the atmosphere, while electric current heats the resistor to incandescent temperatures. Front-side bulk micromachining of the silicon substrate in potassium hydroxide (KOH) solution is used to fabricate the cantilevers that thermally isolate the resistors from the substrate, thus reducing the heat transfer and the current required to light the lamp. Different microlamp geometries were investigated in order to study the power consumption and light emission of the chromium filament. The chromium resistor was embedded in a SiOxNy film deposited by the plasma enhanced chemical vapor deposition (PECVD) technique in order to avoid the oxidation and premature break of the incandescent microlamp. Also, this material is transparent in the visible and near infrared region and it is mechanically and structurally stable with low residual stress and small etch rates in KOH solutions, which makes totally appropriate for the fabrication of self-sustained cantilevers on silicon substrate. © 2008 American Institute of Physics.
Start page
743
End page
748
Volume
992
Language
English
OCDE Knowledge area
Óptica Ingeniería eléctrica, Ingeniería electrónica
Scopus EID
2-s2.0-43649100087
ISSN of the container
15517616
ISBN of the container
978-073540511-0
Conference
AIP Conference Proceedings - 6th Ibero-American Conference onOptics and 9th Latin-American Meeting on Optics, Lasers and Applications, RIAO/OPTILAS 2007
Sources of information: Directorio de Producción Científica Scopus