Title
Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films
Date Issued
25 September 2004
Access level
metadata only access
Resource Type
journal article
Author(s)
Universidad de São Paulo
Publisher(s)
Elsevier BV
Abstract
This work reports on the growth of silicon clusters within silicon oxynitride (SiOxNy) matrices, at low temperatures, by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The films were characterized by Fourier transform infrared spectroscopy (FTIR), soft X-ray absorption spectroscopy (XANES) measurements at the Si K-edge and photoluminescence, before and after thermal annealing at various temperatures. The XANES spectra demonstrate the presence of silicon aggregates in as-deposited and annealed films. A correlation between the presence of silicon clusters in the as-deposited samples and the intensity of the photoluminescence emission is observed. © 2004 Elsevier B.V. All rights reserved.
Start page
116
End page
119
Volume
112
Issue
2-3 SPEC. ISS.
Language
English
OCDE Knowledge area
Química física
Física de plasmas y fluídos
Subjects
Scopus EID
2-s2.0-4344590962
Source
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
ISSN of the container
09215107
Sponsor(s)
The authors acknowledge to Brazilian Synchrotron Light Laboratory—LNLS. The authors are also grateful to Brazilian agencies CNPq, CAPES and FAPESP for financial support (Process Number: 01/06516-1 and 00/10027-3).
Sources of information:
Directorio de Producción Científica
Scopus