Title
High mobility In2O3:H as contact layer for a-Si:H/c-Si heterojunction and μc-Si:H thin film solar cells
Date Issued
02 November 2015
Access level
metadata only access
Resource Type
conference paper
Author(s)
Institute Silicon Photovoltaics
Publisher(s)
Elsevier B.V.
Abstract
The crystallization process of hydrogen doped In2O3:H (IOH) films is investigated with energy-dispersive X-ray diffraction measurements. At annealing temperatures between 125 and 150 °C crystallization of 220 nm thin films occurs within only 2 min, and the percentage of the crystalline phase does not change anymore when the temperature is raised above the crystallization temperature of 150 °C. Maximum electron mobilities above 100 cm2/Vs have been reached after crystallization. The IOH films were integrated as front contact into amorphous/crystalline silicon heterojunction cells and compared to In2O3:Sn (ITO) front contacts. Cells with ITO/IOH bilayer front contacts show a slightly lower open circuit voltage because of the a-Si:H passivation layer degradation caused by the longer annealing process needed for the crystallization of the bilayers, while all cells reach total area efficiencies around 20%. IOH films were also implemented as silver free back contact for μc-Si:H cells, and show higher short-circuit current densities than ZnO:Al back contacts because of the higher near-infra-red transmission of IOH.
Start page
316
End page
322
Volume
594
Language
English
OCDE Knowledge area
Ingeniería de materiales
Subjects
Scopus EID
2-s2.0-84947494985
ISSN of the container
00406090
Conference
Thin Solid Films
Sponsor(s)
The authors would like to thank E. Conrad, K. Jacob and M. Wittig for their wafer processing, C. Klimm for performing SEM measurements and M. Hartig for AZO and Ag depositions. This work was supported by the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU under contract no. 0325299E ), and has received funding from the European Union 's Seventh Programme for research, technological development and demonstration under grant agreement no 608498 (project HERCULES).
Bundesministerium für Umwelt, Naturschutz und Reaktorsicherheit - 0325299E - BMU
Sources of information:
Directorio de Producción Científica
Scopus