Title
Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition
Date Issued
01 August 2011
Access level
metadata only access
Resource Type
journal article
Author(s)
Cao H.
Wu W.
Yu Q.
Chen Y.P.
Purdue University
Abstract
We synthesize hexagonal shaped single-crystal graphene, with edges parallel to the zig-zag orientations, by ambient pressure CVD on polycrystalline Cu foils. We measure the electronic properties of such grains as well as of individual graphene grain boundaries, formed when two grains merged during the growth. The grain boundaries are visualized using Raman mapping of the D band intensity, and we show that individual boundaries between coalesced grains impede electrical transport in graphene and induce prominent weak localization, indicative of intervalley scattering in graphene. © 2011 Elsevier Ltd. All rights reserved.
Start page
1100
End page
1104
Volume
151
Issue
16
Language
English
OCDE Knowledge area
Química física Ingeniería química
Scopus EID
2-s2.0-79960031886
Source
Solid State Communications
ISSN of the container
00381098
Sponsor(s)
QY acknowledges support from NSF and CAM Special Funding. YPC acknowledges support from NSF , DTRA , DHS , IBM , Miller Family Endowment , Midwest Institute for Nanoelectronics Discovery (MIND) . Parts of the measurements were performed at the National High Magnetic Field Laboratory (supported by NSF, DOE and the State of Florida) and the authors thank E. Palm and G. Jones for experimental assistance.
Sources of information: Directorio de Producción Científica Scopus