0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.