Title
Analyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA
Date Issued
31 October 2017
Access level
metadata only access
Resource Type
conference paper
Author(s)
Kastensmidt F.L.
Artola L.
Hubert G.
Medina N.H.
Added N.
Aguiar V.A.P.
Aguirre F.
MacChione E.L.A.
Silveira M.A.G.
Instituto Nacional de Informática Brazil
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
This work highlights the impact of low LET heavy ions particles on the reliability of 28-nm Bulk SRAM cells from 4rtix-7 FPGA. Radiation tests showed significant differences in he MBU cross section of configuration (CRAM) and BRAM memory cells under various angles of incidence. Radiation results re compared with simulations at transistor level by using the ioft error tool, MUSCA SEP3 (MUlti-SCAle Single Event henomenon Prediction Platform) coupled with circuit imulations with the aim to analyze the differences of upset ensitivity as a function of layout SRAM. This analysis leads to etermine the correct layout and technology used in the tested PGA. By using the detailed classification of MBU events, it is ossible to analyze the effectiveness of correction mechanisms of he FPGA configuration memory.
Start page
1
End page
6
Volume
2016-September
Language
English
OCDE Knowledge area
Ingeniería eléctrica, Ingeniería electrónica
Subjects
Scopus EID
2-s2.0-85043578064
Resource of which it is part
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
ISBN of the container
9781509043668
Conference
16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
Sources of information:
Directorio de Producción Científica
Scopus