Title
Reduction of the parasitic couplings in the EMI filters to improve the high frequency insertion loss
Date Issued
26 December 2018
Access level
metadata only access
Resource Type
conference paper
Author(s)
Idir N.
SAFRAN
Publisher(s)
Institute of Electrical and Electronics Engineers Inc.
Abstract
The development of the high switching frequency static converters based on Wide-Bandgap Semiconductors (GaN and SiC) requires EMI filters with high-performance for aeronautic applications. It is well known that the high frequency parasitic couplings between passive components have a negative impact on EMI filter attenuation. In this paper, the method of reduction in parasitic couplings between component-component and component-PCB is analyzed in order to increase the EMI filter attenuation at high frequency (beyond 10MHz). Because of simulation complexity of these high frequency couplings, the proposed method is based mainly on experimental approach. The obtained results put in evidence the effectiveness of the proposed method to improve EMI filter attenuation up to 100MHz.
Start page
5766
End page
5771
Language
English
OCDE Knowledge area
Ingeniería eléctrica, Ingeniería electrónica
Subjects
Scopus EID
2-s2.0-85061538149
ISBN
9781509066841
Resource of which it is part
Proceedings: IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society
ISBN of the container
978-150906684-1
Source funding
Michigan Economic Development Corporation
Sponsor(s)
Región francesa de Altos de Francia
Corporación de Desarrollo Económico de Michigan
Comisión Europea
Fondo Europeo de Desarrollo Regional
IEEE Sociedad de Electrónica Industrial (IES)
Instituto de Ingenieros Eléctricos y Electrónicos (IEEE)
Sources of information:
Directorio de Producción Científica
Scopus