In this work the fabrication of III-V semiconductor laser device with separate confinement is reported. The heterostructure was grown by molecular beam epitaxy technique and it was characterized by optical, morphological and electrical techniques such as photoluminescence, scanning tunneling effect, electroluminescence, current-voltage and current-power relations, respectively. The electronic confinement was carried out by sandwiching the active area with InGaAs quantum well with an appropriated Indium composition that allows a structural coupling between quantum wells and self-assembled InAs quantum dots decreasing dislocations that could commit the device quality. Our aim is to obtain the laser emission in the lower absorption windows for optical fiber telecommunications systems located in the near-infrared.