Title
Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography
Date Issued
01 November 2001
Access level
metadata only access
Resource Type
journal article
Author(s)
Abstract
Electron holography has been, used to analyse the potential profile across GaN/AlxGa1-xN heterostructures. A potential difference of (0.21 ± 0.1) and (0.38 ± 0.12) eV is experimentally observed at the GaN/Al0.19Ga0.81N and GaN/Al0.37Ga0.63N interfaces, respectively. The potential energy profiles show the presence of a positive sheet charge and a two-dimensional electron gas with a density of 1012 cm-2. These measurements are smaller than measurements by other techniques. An analysis of the technique and of observed discrepancies is presented.
Start page
833
End page
837
Volume
188
Issue
2
Language
English
OCDE Knowledge area
Física atómica, molecular y química
Scopus EID
2-s2.0-1842685973
Source
Physica Status Solidi (A) Applied Research
ISSN of the container
00318965
Sources of information:
Directorio de Producción Científica
Scopus