Title
Determination of the electronic band structure for a graded modulation-doped AlGaNAlNGaN superlattice
Date Issued
11 October 2007
Access level
metadata only access
Resource Type
journal article
Author(s)
Abstract
The electronic band structure of a modulation-doped AlGaNAlNGaN superlattice structure where the AlGaN layer is compositionally graded has been experimentally determined by electron holography. It is shown that all periods in the superlattice have a similar two-dimensional-electron-gas distribution, indicating no degradation in the quality of the heterostructures during growth. High-resolution potential energy profiles show that the nominally linear grading of the AlGaN barrier layers results in a parabolic profile in Al composition. Knowledge of the nature of energy barriers for electron transfer between channels is important in the optimization of the perpendicular conductivity of AlGaNGaN superlattice structures. © 2007 American Institute of Physics.
Volume
91
Issue
14
Language
English
OCDE Knowledge area
Física de partículas, Campos de la Física
Scopus EID
2-s2.0-34948839553
Source
Applied Physics Letters
ISSN of the container
00036951
Sponsor(s)
Research at Ulm University was sponsored by a grant from OSRAM Opto Semiconductors (Regensburg) within a project funded by the German Federal Ministry of Education and Research.
Sources of information:
Directorio de Producción Científica
Scopus